april 2013 FDPF035N06B_f152 channel powertrench ? mosfet ?2013 fairchild semiconductor corporation FDPF035N06B_f152 rev.c0 www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FDPF035N06B_f152 unit v dss drain to source voltage 60 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c, silicon limited) 88 a - continuous (t c = 100 o c, silicon limited) 62 i dm drain current - pulsed (note 1) 352 a e as single pulsed avalanche energy (note 2) 600 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 46.3 w - derate above 25 o c0.31w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FDPF035N06B_f152 unit r jc thermal resistance, junction to case, max 3.24 o c/w r ja thermal resistance, junction to ambient, max 62.5 FDPF035N06B_f152 n-channel powertrench ? mosfet 60 v, 88 a, 3.5 m features ?r ds(on) = 2.91 m ( typ.) @ v gs = 10 v, i d = 88 a ?low fom r ds(on) *q g ? low reverse recovery charge, q rr ? soft reverse recovery body diode ? enables highly efficiency in synchronous rectification ? fast switching speed ? 100% uil tested ?rohs compliant description this n-channel mosfet is pr oduced using fairchild semicon- ductor ? ?s advanced powertrench ? process that has been tai- lored to minimize the on-state resistance while maintaining superior switching performance. applications ? synchronous rectification for atx / server / telecom psu ? battery protection circuit ? motor drives and uninterruptible power supplies ? renewable system g s d to-220f g s d
FDPF035N06B_f152 n-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2013 fairchild semiconductor corporation FDPF035N06B_f152 rev.c0 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package packaging type quantity FDPF035N06B FDPF035N06B_f152 to-220f tube 50 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 60 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.03 - v/ o c i dss zero gate voltage drain current v ds = 48v, v gs = 0v - - 1 a i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2-4v r ds(on) static drain to source on resistance v gs = 10v, i d = 88a - 2.91 3.5 m g fs forward transconductance v ds = 10v, i d = 88a - 176 - s c iss input capacitance v ds = 30v, v gs = 0v f = 1mhz - 6035 8030 pf c oss output capacitance - 1685 2240 pf c rss reverse transfer capacitance - 55 - pf c oss(er) energy related output capacitance v ds = 30v, v gs = 0v - 2619 - pf q g(tot) total gate charge at 10v v ds = 30v, i d = 100a v gs = 10v (note 4) -7699nc q gs gate to source gate charge - 29 - nc q gd gate to drain ?miller? charge - 12 - nc v plateau gate plateau volatge - 5.2 - v q sync total gate charge sync. v ds = 0v, i d = 50a (note 5) - 67.3 - nc q oss output charge v ds = 30v, v gs = 0v - 92.4 - nc t d(on) turn-on delay time v dd = 30v, i d = 100a v gs = 10v, r gen = 4.7 (note 4) -3274ns t r turn-on rise time - 33 76 ns t d(off) turn-off delay time - 56 122 ns t f turn-off fall time - 23 56 ns esr equivalent series resistance (g-s) f = 1mhz - 2.0 - i s maximum continuous drain to source diode forward current - - 88 a i sm maximum pulsed drain to source diode forward current - - 352 a v sd drain to source diode forward voltage v gs = 0v, i sd = 88a - - 1.25 v t rr reverse recovery time v gs = 0v, i sd = 100a di f /dt = 100a/ s -71-ns q rr reverse recovery charge - 78 - nc notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. l = 3mh, i as = 20a, starting t j = 25 c 3. i sd 100a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature typical characteristics 5. see the test circuit in page 8
FDPF035N06B_f152 n-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2013 fairchild semiconductor corporation FDPF035N06B_f152 rev.c0 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 2 10 100 400 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 5.0v 234567 1 10 100 200 -55 o c 175 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 50 100 150 200 250 300 2.0 2.5 3.0 3.5 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [m ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 200 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 60 10 100 1000 10000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 2040608090 0 2 4 6 8 10 *note: i d = 100a v ds = 12v v ds = 30v v ds = 48v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDPF035N06B_f152 n-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2013 fairchild semiconductor corporation FDPF035N06B_f152 rev.c0 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. eoss vs. drain to source voltage figure 12. unclamped inductive switching capability -100 -50 0 50 100 150 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 *notes: 1. v gs = 10v 2. i d = 88a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] 0.1 1 10 100 0.01 0.1 1 10 100 1000 100 s 1ms 10ms 100ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) single pulse t c = 25 o c t j = 175 o c r jc = 3.24 o c/w dc 25 50 75 100 125 150 175 0 20 40 60 80 100 r jc = 3.24 o c/w v gs = 10v i d , drain current [a] t c , case temperature [ o c] 0 102030405060 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e oss , [ j] v ds , drain to source voltage [v] 0.001 0.01 0.1 1 10 100 1000 1 10 100 200 t j = 25 o c t j = 150 o c t av , time in avalanche (ms) i as , avalanche current (a) -100 -50 0 50 100 150 200 0.90 0.95 1.00 1.05 1.10 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c]
FDPF035N06B_f152 n-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2013 fairchild semiconductor corporation FDPF035N06B_f152 rev.c0 typical performance characteristics (continued) figure 13 . transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.02 0.1 1 4 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 3.24 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDPF035N06B_f152 n-channel powertrench ? mosfet www.fairchildsemi.com 6 ?2013 fairchild semiconductor corporation FDPF035N06B_f152 rev.c0 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms g s d g s d
FDPF035N06B_f152 n-channel powertrench ? mosfet www.fairchildsemi.com 7 ?2013 fairchild semiconductor corporation FDPF035N06B_f152 rev.c0 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDPF035N06B_f152 n-channel powertrench ? mosfet www.fairchildsemi.com 8 ?2013 fairchild semiconductor corporation FDPF035N06B_f152 rev.c0 total gate charge qsync. test circuit & waveforms
FDPF035N06B_f152 n-channel powertrench ? mosfet www.fairchildsemi.com 9 ?2013 fairchild semiconductor corporation FDPF035N06B_f152 rev.c0 to-220f mechanical dimensions * front/back side isolation voltage : ac 2500v
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?2013 fairchild semiconductor corporation FDPF035N06B_f152 rev.c0
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